Resistance variable memory device and programming method thereof
US7778066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2008 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Nov 11, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a method of programming a resistance variable memory device. The resistance variable memory device includes a memory cell having multi states and a write driver outputting a program pulse for programming the memory cell into one of the multi states. The method of programming the resistance variable memory device includes applying a first program pulse to the resistance variable memory device and applying a second program pulse to a memory cell when the memory cell is programmed into an intermediate state. When the first program pulse is a reset pulse, the reset pulse is an over program pulse, that is, an over reset pulse. Therefore, the resistance variable memory device can secure a sufficient read margin as well as improve a resistance drift margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.