Patent · US Active

Integrated circuit having NAND memory cell strings

US7778073B2 · kind B2 · utility

6Cited by

5References

18Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Josef Willer · Riemerling, DE
Franz Hofmann · Munich, DE
Detlev Richter · Unterhaching, DE
Nicolas Nagel · Yokohama, JP

Key dates

Filing date	Oct 15, 2007
Grant date	Aug 17, 2010
Priority date	—
Expiry date	Jun 23, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10B69/00
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Embodiments of the present invention relate generally to integrated circuits and methods for manufacturing an integrated circuit. In an embodiment of the invention, an integrated circuit having a memory cell is provided. The memory cell may include a trench in a carrier, a charge trapping layer structure in the trench, the charge trapping layer structure comprising at least two separate charge trapping regions, electrically conductive material at least partially filled in the trench, and source/drain regions next to the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.