Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US7780814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2005 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Nov 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency. The filter may further include a set of filter circuits coupled to the source power applicator and being tuned to, respectively, a second harmonic of the bias frequency and intermodulation products of the second harmonic of the bias frequency and the source frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.