Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US7780864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2006 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | May 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.