System and method for providing a single deposition emitter/base in a bipolar junction transistor
US7781295B1 · kind B1 · utility
4Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Jul 13, 2006 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Jul 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/054
Abstract
A system and method is disclosed for manufacturing a bipolar junction transistor that comprises an emitter/base layer that is formed by a single deposition process. In one advantageous embodiment of the invention the emitter/base layer comprises an emitter layer that comprises an epitaxially grown mono-silicon emitter. The epitaxially grown mono-silicon emitter significantly reduces the electrical resistivity of the emitter. A non-dopant impurity such as germanium is added to the base layer to endpoint a dry plasma etch process that is applied to etch the emitter/base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.