Methods for producing low-k carbon doped oxide films with low residual stress
US7781351B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2004 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Sep 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.