Semiconductor devices and methods of fabricating the same
US7781849B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices and methods of fabricating the same, and more specifically, semiconductor devices having a W—Ni alloy thin layer that has a low resistance, and methods of fabricating the same. The semiconductor devices include the W—Ni alloy thin layer. The weight of Ni in the W—Ni alloy thin layer may be in a range from approximately 0.01 to approximately 5.0 wt % of the total weight of the W—Ni alloy thin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.