Semiconductor device and method for producing the same

US7781897B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Khalil Hosseini · Weihmichl, DE
• Eduard Knauer · Deuerling, DE
• Joachim Mahler · Regensburg, DE
• Peter Mederer · Regensburg, DE
• Konrad Roesl · Teublitz, DE

Key dates

• Filing date: May 31, 2006
• Grant date: Aug 24, 2010
• Expiry date: Jan 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/20753
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device has a circuit carrier with a number of internal contact areas is disclosed, which includes a first material with a first electrochemical potential, and a semiconductor chip with an active surface and a number of chip contact areas, which include a second material with a second electrochemical potential. Bonding wire connections are arranged between the chip contact areas and the internal contact areas of the leadframe and comprise a third material with a third electrochemical potential. The connecting points between the chip contact areas and the bonding wires and/or the connecting points between the internal contact areas and the bonding wires are coated with an anticorrosive layer.