Patent · US Active

Integrated circuits and methods of design and manufacture thereof

US7785946B2 · kind B2 · utility

19Cited by

8References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Henning Haffner · Pawling, US
Manfred Eller · Wappingers Falls, US
Richard Lindsay · Beacon, US

Key dates

Filing date	Sep 25, 2007
Grant date	Aug 31, 2010
Priority date	—
Expiry date	Jan 21, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are dummy electrodes. Based on the location of these dummy electrodes, selected dummy electrodes are removed using a second mask. The use of the method provides greater flexibility in tailoring individual devices for different objectives.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.