Patent · US Active

Method for forming trenches on a surface of a semiconductor substrate

US7785953B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Josef Willer · Riemerling, DE
Michael Specht · Munich, DE
Christoph Friederich · Birkenfeld, DE
Doris Keitel-Schulz · Grevesmühlen, DE

Key dates

Filing date	Apr 30, 2008
Grant date	Aug 31, 2010
Priority date	—
Expiry date	Jul 30, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming trenches on a surface of a semiconductor substrate is described. The method may include: etching a first plurality of trenches into the surface of the semiconductor substrate; filling the first plurality of trenches with at least one material; and etching a second plurality of trenches into every second trench of the first plurality of trenches. Furthermore, a method for forming floating-gate electrodes on a semiconductor substrate and an integrated circuit is described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.