Methods of forming a plurality of capacitors
US7785962B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.