Inventor · Boise, ID, US

Vishwanath Bhat

69Patents
9h-index
45Co-inventors
74Inventor score

Filing activity: Aug 6, 2003 → Apr 14, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7557013B2 Methods of forming a plurality of capacitors Electricity 55 Active
US7682924B2 Methods of forming a plurality of capacitors Electricity 44 Active
US7785962B2 Methods of forming a plurality of capacitors Electricity 16 Active
US9397143B2 Liner for phase change memory (PCM) array and associated techniques and configurations Electricity 14 Active
US7976897B2 Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems Chemistry; Metallurgy 13 Active
US10249819B2 Methods of forming semiconductor structures including multi-portion liners Electricity 12 Active
US7902081B2 Methods of etching polysilicon and methods of forming pluralities of capacitors Electricity 12 Active
US6855594B1 Methods of forming capacitors Electricity 9 Expired
US8371781B2 Seat track fitting Emerging Cross-Sectional Technologies 9 Active
US8602702B2 Seat track fitting Performing Operations; Transporting 9 Active
US8564095B2 Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same Electricity 8 Active
US7820506B2 Capacitors, dielectric structures, and methods of forming dielectric structures Electricity 8 Active
US8110469B2 Graded dielectric layers Electricity 8 Active
US8518486B2 Methods of forming and utilizing rutile-type titanium oxide Emerging Cross-Sectional Technologies 7 Active
US7056784B2 Methods of forming capacitors by ALD to prevent oxidation of the lower electrode Electricity 6 Expired
US7115929B2 Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials Electricity 6 Expired
US7618874B1 Methods of forming capacitors Emerging Cross-Sectional Technologies 5 Active
US8760845B2 Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same Electricity 5 Active
US9466660B2 Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures Electricity 4 Active
US8481122B2 Methods of forming material over substrates Chemistry; Metallurgy 4 Active
US7635623B2 Methods of forming capacitors Electricity 4 Active
US8603877B2 Methods of forming dielectric material-containing structures Electricity 4 Active
US8748283B2 Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material Electricity 3 Active
US8940388B2 Insulative elements Emerging Cross-Sectional Technologies 3 Active
US8236372B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.