Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage
US7785971B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Fabrication of complementary first and second insulated-gate field-effect transistors (110 or 112 and 120 or 122) from a semiconductor body entails separately introducing (i) three body-material dopants into the body material (50) for the first transistor so as to reach respective maximum dopant concentrations at three different locations in the first transistor's body material and (ii) two body-material dopants into the body material (130) for the second transistor so as to reach respective maximum dopant concentrations at two different locations in the second transistor's body material. Gate electrodes (74 or 94 and 154 or 194) are subsequently defined after which source/drain zones (60, 62 or 80, 82 and 140, 142 or 160, 162) are formed in the semiconductor body. The vertical dopant profiles resulting from the body-material dopants alleviate punchthrough and reduce current leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.