Method of forming memory cell using gas cluster ion beams
US7785978B2 · kind B2 · utility
23Cited by
4References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 4, 2009 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.