Method for high-resolution processing of thin layers using electron beams

US7786403B2 · kind B2 · utility

Assignee

• NaWoTec GmbH · DE

Inventors

• Hans Koops · Ober-Ramstadt, DE
• Klaus Edinger · Lorsch, DE
• Sergey Babin · Castro Valley, US
• Thorsten Hofmann · Rodgau, DE
• Petra Spies · Mainz, DE

Key dates

• Filing date: Aug 27, 2004
• Grant date: Aug 31, 2010
• Expiry date: Jan 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/31744
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.