Integrated circuit having dielectric layer including nanocrystals

US7786464B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Nirschl · Putzbrunn, DE
• Ronald Kakoschke · Birkenfeld, DE

Key dates

• Filing date: Nov 20, 2007
• Grant date: Aug 31, 2010
• Expiry date: May 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An integrated circuit includes a first electrode, resistivity changing material coupled to the first electrode, and a second electrode. The integrated circuit includes a dielectric material layer between the resistivity changing material and the second electrode. The dielectric material layer includes nanocrystals.