Semiconductor power device having a stacked discrete inductor structure
US7786837B2 · kind B2 · utility
43Cited by
7References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Jun 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.