Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers
US7787221B2 · kind B2 · utility
3Cited by
6References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.