Resistance variable memory device and operating method thereof
US7787278B2 · kind B2 · utility
15Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2008 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 16, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a resistance variable memory device and a method for operating same. The resistance variable memory device has a phase change material between a top electrode and a bottom electrode. In the method for operating a resistance variable memory, the write current is applied in a direction from the top electrode to the bottom electrode, and the read current is applied in a direction from the bottom electrode to the top electrode. The phase change material is programmed by applying the write current, and a resistance drift of the phase change material is restrained by applying the read current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.