MRAM design with local write conductors of reduced cross-sectional area
US7787289B2 · kind B2 · utility
4Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.