Pattern data correction method, pattern checking method, pattern check program, photo mask producing method, and semiconductor device manufacturing method
US7788626B2 · kind B2 · utility
5Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2005 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Jan 9, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.