Patent · US Active

Endpoint for electroprocessing

US7790015B2 · kind B2 · utility

5Cited by

102References

15Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Yan Wang · Chongqing, CN
Antoine P. Manens · Palo Alto, US
Siew Neo · Sunnyvale, US
Alain Duboust · Sunnyvale, US
Liang-Yuh Chen · San Jose, US

Key dates

Filing date	Oct 31, 2007
Grant date	Sep 7, 2010
Priority date	—
Expiry date	Oct 1, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH04N1/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.