Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation
US7790528B2 · kind B2 · utility
2Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process and apparatus provide a planarized hybrid substrate (15) by thermally oxidizing SOI sidewalls (90) in a trench opening (93) to form SOI sidewall oxide spacers (94) which are trimmed while etching through a buried oxide layer (80) to expose the underlying bulk substrate (70) for subsequent epitaxial growth of an epitaxial semiconductor layer (96). In this way, SOI sidewall oxide spacers (94) are formed that prevent epitaxial SOI sidewalls from being formed in the trench opening (93) during the epitaxial growth step, and that can be readily removed during any subsequent STI etch process
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.