Process for producing SOI substrate and process for regeneration of layer transferred wafer in the production
US7790573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Mar 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.