Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film
US7790627B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Dec 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.