Method of forming high dielectric constant films using a plurality of oxidation sources
US7790628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jul 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for depositing a high dielectric constant (high-k) film for integrated circuits (ICs) by atomic layer deposition (ALD) or chemical vapor deposition (CVD). The method includes exposing a substrate to one or more metal precursors and plurality of oxidation sources to deposit a high-k film with a desired thickness and tailored properties. The plurality of oxidation sources contain a first oxidation source containing H2O, H2O2, or a combination thereof, and a second oxidation source containing oxygen radicals (O), O3, or O2, or a combination of two or more thereof. The high-k film may contain one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table of the Elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.