Method for depositing and curing low-k films for gapfill and conformal film applications
US7790634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jun 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.