Electron induced chemical etching/deposition for enhanced detection of surface defects
US7791055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jan 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N1/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.