Mask-patterns including intentional breaks
US7793253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Dec 9, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.