Forming a semiconductor device having epitaxially grown source and drain regions

US7795089B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Laegu Kang · Hopewell Junction, US
• Vishal P. Trivedi · Chandler, US
• Da Zhang · New Taipei, TW

Key dates

• Filing date: Feb 28, 2007
• Grant date: Sep 14, 2010
• Expiry date: Apr 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A semiconductor device structure is made on a semiconductor substrate having a semiconductor layer having isolation regions. A first gate structure is formed over a first region of the semiconductor layer, and a second gate structure is over a second region of the semiconductor layer. A first insulating layer is formed over the first and second regions. The first insulating layer can function as a mask during an etch of the semiconductor layer and can be removed selective to the isolation regions and the sidewall spacers. The first insulating layer is removed from over the first region to leave a remaining portion of the first insulating layer over the second region. The semiconductor layer is recessed in the first region adjacent to the first gate to form recesses. A semiconductor material is epitaxially grown in the recesses. The remaining portion of the first insulating layer is removed.