Method of forming a MOS transistor
US7795101B2 · kind B2 · utility
6Cited by
23References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2010 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Feb 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.