Method for removing damaged dielectric material
US7795148B2 · kind B2 · utility
40Cited by
10References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process includes a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.