Pattern measuring method and electron microscope
US7795581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Mar 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a pattern measuring method and an electron microscope that achieve truly high measurement throughput by achieving both precise location of a measurement target position and high-speed movement of the scanning position of an electron beam to the measurement target position. In order to attain the object described above, according to an aspect of the present invention, there is provided a pattern measuring method and an apparatus that move the scanning position of an electron beam based on coordinate information about a first pattern, which is a target to be measured with the electron beam, move the scanning position of the electron beam to a region comprising a second pattern, the relative distance of which from the first pattern is previously registered, in a case where detection of the first pattern at the point of arrival fails, and move the scanning position of the electron beam based on detection of the second pattern and information about the relative distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.