Nanowire field-effect transistors
US7795677B2 · kind B2 · utility
138Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Jan 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.