Silicon single crystal ingot and wafer, growing apparatus and method thereof
US7799130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2006 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Mar 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.