Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
US7799602B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Dec 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is made by forming a build-up interconnect structure over a substrate. A semiconductor die is mounted to the build-up interconnect structure. The semiconductor die is electrically connected to the build-up interconnect structure. A ground pad is formed on the build-up interconnect structure. An encapsulant is formed over the semiconductor die and build-up interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the build-up interconnect structure to isolate the semiconductor die from inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. The substrate is removed. A backside interconnect structure is formed over the build-up interconnect structure, opposite the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.