Patent · US Active

Method of fabricating a power electronic device

US7799614B2 · kind B2 · utility

20Cited by

8References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ralf Otremba · Kaufbeuren, DE
Oliver Haeberlen · Villach, AT
Klaus Schiess · Allensbach, DE

Key dates

Filing date	Dec 21, 2007
Grant date	Sep 21, 2010
Priority date	—
Expiry date	Jun 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device and method is disclosed. In one embodiment, a method includes providing an electrically insulating substrate. A first electrically conductive layer is applied over the electrically insulating substrate. A first semiconductor chip is placed over the first electrically conductive layer. An electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the electrically insulating layer. A through connection is formed in the electrically insulating layer to couple the second electrically conductive layer to the first electrically conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.