Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using

US7800092B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jun Liu · 红钢城街道, CN
• Mike Violette · Boise, US
• Jon Daley · Boise, US

Key dates

• Filing date: Aug 15, 2006
• Grant date: Sep 21, 2010
• Expiry date: Mar 19, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31678

Abstract

A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change material layer, and electrically coupled to a third conductive material layer. An electrically isolating material layer is formed between the phase change material layer and the energy conversion layer.