Resistance memory with tungsten compound and manufacturing
US7800094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jan 28, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices based on tungsten-oxide memory regions are described, along with methods for manufacturing and methods for programming such devices. The tungsten-oxide memory region can be formed by oxidation of tungsten material using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a bottom electrode and a memory element on the bottom electrode. The memory element comprises at least one tungsten-oxygen compound and is programmable to at least two resistance states. A top electrode comprising a barrier material is on the memory element, the barrier material preventing movement of metal-ions from the top electrode into the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.