Semiconductor constructions
US7800137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2009 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jun 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The electrically conductive material can be incorporated into an electrically-grounded shield, and/or can be configured to create a magnetic field bias. Also, the conductive material can have electrically isolated segments that are utilized as electrical jumpers for connecting circuit elements. The invention also includes semiconductor constructions comprising the electrically conductive material between line constructions associated with one or both of the pitch region and the peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.