CMOS active pixel sensor
US7800148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Aug 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/17
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.