Power semiconductor device connected in distinct layers of plastic

US7800217B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Otremba · Kaufbeuren, DE
• Helmut Strack · Hersbruck, DE

Key dates

• Filing date: May 10, 2007
• Grant date: Sep 21, 2010
• Expiry date: May 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/351
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device and a method for its production. The power semiconductor device has at least one power semiconductor chip, which has on its top side and on its back side large-area electrodes. The electrodes are electrically in connection with external contacts by means of connecting elements, the power semiconductor chip and the connecting elements being embedded in a plastic package. This plastic package has a number of layers of plastic, which are pressed one on top of the other and have plane-parallel upper sides. The connecting elements are arranged on at least one of the plane-parallel upper sides, between the layers of plastic pressed one on top of the other, as a patterned metal layer and are electrically in connection with the external contacts by means of contact vias through at least one of the layers of plastic.