Surface depressions for die-to-die interconnects and associated systems and methods
US7800238B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jun 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stacked microelectronic dies employing die-to-die interconnects and associated systems and methods are disclosed herein. In one embodiment, a stacked system of microelectronic dies includes a first microelectronic die, a second microelectronic die attached to the first die, and a die-to-die interconnect electrically coupling the first die with the second die. The first die includes a back-side surface, a surface depression in the back-side surface, and a first metal contact located within the surface depression. The second die includes a front-side surface and a second metal contact located at the front-side surface and aligned with the first metal contact of the first die. The die-to-die interconnect electrically couples the first metal contact of the first die with the second metal contact of the second die and includes a flowable metal layer that at least partially fills the surface depression of the first die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.