Programming method of a non-volatile memory device
US7800955B2 · kind B2 · utility
7Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Feb 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a programming method of a non-volatile memory device, a program operation is performed by applying a program voltage to a selected word line and a first pass voltage to unselected word lines. The first pass voltage shifts to a second pass voltage having a level lower than that of the first pass voltage. A verify operation is performed by applying a verify voltage to the selected word line. The verify voltage has a level lower than that of the second pass voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.