Compositions and methods for CMP of semiconductor materials
US7803203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Dec 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.