MOSFET on SOI device

US7804134B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Philippe Coronel · Barraux, FR
• Claire Fenouillet-Beranger · Grenoble, FR

Key dates

• Filing date: Jan 18, 2008
• Grant date: Sep 28, 2010
• Expiry date: Dec 7, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A MOSFET on SOI device includes an upper region having at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first conductive layer and a first portion of a second semi-conductor layer. A lower region includes at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one conductive portion. The second semi-conductor layer is arranged on a second dielectric layer stacked on a second conductive layer.