Immersion lithography contamination gettering layer

US7807335B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel A. Corliss · Cohoes, US
• Dario Gil · Mount Kisco, US
• Dario L. Goldfarb · Potsdam, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Kurt R. Kimmel · Jericho, US
• Karen E. Petrillo · Mahopac, US
• Dmitriy Shneyder · Hopewell Junction, US

Key dates

• Filing date: Jun 3, 2005
• Grant date: Oct 5, 2010
• Expiry date: Jan 27, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/162
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.