Photoresists for visible light imaging
US7807340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/127
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I):where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.