Lanthanide series metal implant to control work function of metal gate electrodes
US7807522B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Jan 31, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. Metal nitride is formed above a gate dielectric. A lanthaide series metal is implanted into the metal screen layer above the gate dielectric. The lanthaide metal is contained in the screen layer or at the interface between the screen metal layer and the gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting PMOS or NMOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.