Manfred Ramin
12Patents
3h-index
7Co-inventors
45Inventor score
Filing activity: Feb 7, 2006 → Apr 2, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7737015B2 | Formation of fully silicided gate with oxide barrier on the source/drain silicide regions | Electricity | 24 | Active |
| US7560379B2 | Semiconductive device fabricated using a raised layer to silicide the gate | Electricity | 6 | Active |
| US7629212B2 | Doped WGe to form dual metal gates | Electricity | 4 | Active |
| US7858459B2 | Work function adjustment with the implant of lanthanides | Electricity | 3 | Active |
| US7807522B2 | Lanthanide series metal implant to control work function of metal gate electrodes | Electricity | 3 | Active |
| US8304342B2 | Sacrificial CMP etch stop layer | Emerging Cross-Sectional Technologies | 2 | Active |
| US8304333B2 | Method of forming a high-k gate dielectric layer | Electricity | 2 | Active |
| US8748246B2 | Integration scheme for dual work function metal gates | Electricity | 1 | Active |
| US7799669B2 | Method of forming a high-k gate dielectric layer | Electricity | 1 | Active |
| US8802519B2 | Work function adjustment with the implant of lanthanides | Electricity | 0 | Active |
| US8409943B2 | Work function adjustment with the implant of lanthanides | Electricity | 0 | Active |
| US8043947B2 | Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.